Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS(2), WS(2), WSe(2 )and MoSe(2) exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts,...

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Detalles Bibliográficos
Autores principales: Terrones, Humberto, López-Urías, Florentino, Terrones, Mauricio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3607896/
https://www.ncbi.nlm.nih.gov/pubmed/23528957
http://dx.doi.org/10.1038/srep01549

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3607896/
https://www.ncbi.nlm.nih.gov/pubmed/23528957
http://dx.doi.org/10.1038/srep01549

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