Electromigration failure in a copper dual-damascene structure with a through silicon via

Electromigration induced failure development in a copper dual-damascene structure with a through silicon via (TSV) located at the cathode end of the line is studied. The resistance change caused by void growth under the TSV and the interconnect lifetime estimation are modeled based on analytical exp...

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Detalles Bibliográficos
Autores principales: de Orio, R.L., Ceric, H., Selberherr, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Pergamon Press 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3608028/
https://www.ncbi.nlm.nih.gov/pubmed/23564974
http://dx.doi.org/10.1016/j.microrel.2012.07.021

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3608028/
https://www.ncbi.nlm.nih.gov/pubmed/23564974
http://dx.doi.org/10.1016/j.microrel.2012.07.021

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