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Electromigration failure in a copper dual-damascene structure with a through silicon via
Electromigration induced failure development in a copper dual-damascene structure with a through silicon via (TSV) located at the cathode end of the line is studied. The resistance change caused by void growth under the TSV and the interconnect lifetime estimation are modeled based on analytical exp...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Pergamon Press
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3608028/ https://www.ncbi.nlm.nih.gov/pubmed/23564974 http://dx.doi.org/10.1016/j.microrel.2012.07.021 |