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Subband engineering in n-type silicon nanowires using strain and confinement
We present a model based on k · p theory which is able to capture the subband structure effects present in ultra-thin strained silicon nanowires. For electrons, the effective mass and valley minima are calculated for different crystal orientations, thicknesses, and strains. The actual enhancement of...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Pergamon Press
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3608036/ https://www.ncbi.nlm.nih.gov/pubmed/23564977 http://dx.doi.org/10.1016/j.sse.2011.11.022 |