SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (1:3), IPA/water (7:3), n-amyl acetate, xylene, and xylene/methano...

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Detalles Bibliográficos
Autores principales: Mohammad, Mohammad Ali, Dew, Steven K, Stepanova, Maria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3617037/
https://www.ncbi.nlm.nih.gov/pubmed/23531370
http://dx.doi.org/10.1186/1556-276X-8-139

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3617037/
https://www.ncbi.nlm.nih.gov/pubmed/23531370
http://dx.doi.org/10.1186/1556-276X-8-139

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