Electrical and optical properties of Al-doped ZnO and ZnAl(2)O(4) films prepared by atomic layer deposition

ZnO/Al(2)O(3) multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al(2)O...

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Detalles Bibliográficos
Autores principales: Hou, Qiongqiong, Meng, Fanjie, Sun, Jiaming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3617121/
https://www.ncbi.nlm.nih.gov/pubmed/23537274
http://dx.doi.org/10.1186/1556-276X-8-144

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3617121/
https://www.ncbi.nlm.nih.gov/pubmed/23537274
http://dx.doi.org/10.1186/1556-276X-8-144

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