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Electrical and optical properties of Al-doped ZnO and ZnAl(2)O(4) films prepared by atomic layer deposition
ZnO/Al(2)O(3) multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al(2)O...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3617121/ https://www.ncbi.nlm.nih.gov/pubmed/23537274 http://dx.doi.org/10.1186/1556-276X-8-144 |