Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambi...

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Detalles Bibliográficos
Autores principales: Fontana, Marcio, Deppe, Tristan, Boyd, Anthony K., Rinzan, Mohamed, Liu, Amy Y., Paranjape, Makarand, Barbara, Paola
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3620663/
https://www.ncbi.nlm.nih.gov/pubmed/23567328
http://dx.doi.org/10.1038/srep01634

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3620663/
https://www.ncbi.nlm.nih.gov/pubmed/23567328
http://dx.doi.org/10.1038/srep01634

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