Cargando…

Silicon carbide light-emitting diode as a prospective room temperature source for single photons

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting dio...

Descripción completa

Detalles Bibliográficos
Autores principales: Fuchs, F., Soltamov, V. A., Väth, S., Baranov, P. G., Mokhov, E. N., Astakhov, G. V., Dyakonov, V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3622138/
https://www.ncbi.nlm.nih.gov/pubmed/23572127
http://dx.doi.org/10.1038/srep01637
_version_ 1782265807951101952
author Fuchs, F.
Soltamov, V. A.
Väth, S.
Baranov, P. G.
Mokhov, E. N.
Astakhov, G. V.
Dyakonov, V.
author_facet Fuchs, F.
Soltamov, V. A.
Väth, S.
Baranov, P. G.
Mokhov, E. N.
Astakhov, G. V.
Dyakonov, V.
author_sort Fuchs, F.
collection PubMed
description Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.
format Online
Article
Text
id pubmed-3622138
institution National Center for Biotechnology Information
language English
publishDate 2013
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-36221382013-04-10 Silicon carbide light-emitting diode as a prospective room temperature source for single photons Fuchs, F. Soltamov, V. A. Väth, S. Baranov, P. G. Mokhov, E. N. Astakhov, G. V. Dyakonov, V. Sci Rep Article Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing. Nature Publishing Group 2013-04-10 /pmc/articles/PMC3622138/ /pubmed/23572127 http://dx.doi.org/10.1038/srep01637 Text en Copyright © 2013, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
spellingShingle Article
Fuchs, F.
Soltamov, V. A.
Väth, S.
Baranov, P. G.
Mokhov, E. N.
Astakhov, G. V.
Dyakonov, V.
Silicon carbide light-emitting diode as a prospective room temperature source for single photons
title Silicon carbide light-emitting diode as a prospective room temperature source for single photons
title_full Silicon carbide light-emitting diode as a prospective room temperature source for single photons
title_fullStr Silicon carbide light-emitting diode as a prospective room temperature source for single photons
title_full_unstemmed Silicon carbide light-emitting diode as a prospective room temperature source for single photons
title_short Silicon carbide light-emitting diode as a prospective room temperature source for single photons
title_sort silicon carbide light-emitting diode as a prospective room temperature source for single photons
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3622138/
https://www.ncbi.nlm.nih.gov/pubmed/23572127
http://dx.doi.org/10.1038/srep01637
work_keys_str_mv AT fuchsf siliconcarbidelightemittingdiodeasaprospectiveroomtemperaturesourceforsinglephotons
AT soltamovva siliconcarbidelightemittingdiodeasaprospectiveroomtemperaturesourceforsinglephotons
AT vaths siliconcarbidelightemittingdiodeasaprospectiveroomtemperaturesourceforsinglephotons
AT baranovpg siliconcarbidelightemittingdiodeasaprospectiveroomtemperaturesourceforsinglephotons
AT mokhoven siliconcarbidelightemittingdiodeasaprospectiveroomtemperaturesourceforsinglephotons
AT astakhovgv siliconcarbidelightemittingdiodeasaprospectiveroomtemperaturesourceforsinglephotons
AT dyakonovv siliconcarbidelightemittingdiodeasaprospectiveroomtemperaturesourceforsinglephotons