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Silicon carbide light-emitting diode as a prospective room temperature source for single photons
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting dio...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3622138/ https://www.ncbi.nlm.nih.gov/pubmed/23572127 http://dx.doi.org/10.1038/srep01637 |
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author | Fuchs, F. Soltamov, V. A. Väth, S. Baranov, P. G. Mokhov, E. N. Astakhov, G. V. Dyakonov, V. |
author_facet | Fuchs, F. Soltamov, V. A. Väth, S. Baranov, P. G. Mokhov, E. N. Astakhov, G. V. Dyakonov, V. |
author_sort | Fuchs, F. |
collection | PubMed |
description | Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing. |
format | Online Article Text |
id | pubmed-3622138 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-36221382013-04-10 Silicon carbide light-emitting diode as a prospective room temperature source for single photons Fuchs, F. Soltamov, V. A. Väth, S. Baranov, P. G. Mokhov, E. N. Astakhov, G. V. Dyakonov, V. Sci Rep Article Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing. Nature Publishing Group 2013-04-10 /pmc/articles/PMC3622138/ /pubmed/23572127 http://dx.doi.org/10.1038/srep01637 Text en Copyright © 2013, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/ |
spellingShingle | Article Fuchs, F. Soltamov, V. A. Väth, S. Baranov, P. G. Mokhov, E. N. Astakhov, G. V. Dyakonov, V. Silicon carbide light-emitting diode as a prospective room temperature source for single photons |
title | Silicon carbide light-emitting diode as a prospective room temperature source for single photons |
title_full | Silicon carbide light-emitting diode as a prospective room temperature source for single photons |
title_fullStr | Silicon carbide light-emitting diode as a prospective room temperature source for single photons |
title_full_unstemmed | Silicon carbide light-emitting diode as a prospective room temperature source for single photons |
title_short | Silicon carbide light-emitting diode as a prospective room temperature source for single photons |
title_sort | silicon carbide light-emitting diode as a prospective room temperature source for single photons |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3622138/ https://www.ncbi.nlm.nih.gov/pubmed/23572127 http://dx.doi.org/10.1038/srep01637 |
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