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Influence of diffusion on space-charge-limited current measurements in organic semiconductors
Numerical simulations of current–voltage curves in electron-only devices are used to discuss the influence of charged defects on the information derived from fitting space-charge-limited current models to the data. Charged, acceptor-like defects lead to barriers impeding the flow of electrons in ele...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Beilstein-Institut
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3628774/ https://www.ncbi.nlm.nih.gov/pubmed/23616937 http://dx.doi.org/10.3762/bjnano.4.18 |