Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO(2), and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was th...

Descripción completa

Detalles Bibliográficos
Autores principales: Ye, Zhi-Yuan, Lu, Hong-Liang, Geng, Yang, Gu, Yu-Zhu, Xie, Zhang-Yi, Zhang, Yuan, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3630000/
https://www.ncbi.nlm.nih.gov/pubmed/23442766
http://dx.doi.org/10.1186/1556-276X-8-108

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3630000/
https://www.ncbi.nlm.nih.gov/pubmed/23442766
http://dx.doi.org/10.1186/1556-276X-8-108

Ejemplares similares