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Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO(2), and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was th...

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Detalles Bibliográficos
Autores principales:	Ye, Zhi-Yuan, Lu, Hong-Liang, Geng, Yang, Gu, Yu-Zhu, Xie, Zhang-Yi, Zhang, Yuan, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2013
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3630000/ https://www.ncbi.nlm.nih.gov/pubmed/23442766 http://dx.doi.org/10.1186/1556-276X-8-108

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