Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and rupture of conductive filaments is generally known to be the mechanism that underlies resistive switching. The nature of the filament has been...

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Detalles Bibliográficos
Autores principales: Kim, Sungho, Kim, Sae-Jin, Kim, Kyung Min, Lee, Seung Ryul, Chang, Man, Cho, Eunju, Kim, Young-Bae, Kim, Chang Jung, -In Chung, U., Yoo, In-Kyeong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3631947/
https://www.ncbi.nlm.nih.gov/pubmed/23604263
http://dx.doi.org/10.1038/srep01680

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3631947/
https://www.ncbi.nlm.nih.gov/pubmed/23604263
http://dx.doi.org/10.1038/srep01680

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