Strain Field Mapping of Dislocations in a Ge/Si Heterostructure

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HR...

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Detalles Bibliográficos
Autores principales: Liu, Quanlong, Zhao, Chunwang, Su, Shaojian, Li, Jijun, Xing, Yongming, Cheng, Buwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2013
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3633871/
https://www.ncbi.nlm.nih.gov/pubmed/23626845
http://dx.doi.org/10.1371/journal.pone.0062672

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3633871/
https://www.ncbi.nlm.nih.gov/pubmed/23626845
http://dx.doi.org/10.1371/journal.pone.0062672

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