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Strain Field Mapping of Dislocations in a Ge/Si Heterostructure

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HR...

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Autores principales: Liu, Quanlong, Zhao, Chunwang, Su, Shaojian, Li, Jijun, Xing, Yongming, Cheng, Buwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3633871/
https://www.ncbi.nlm.nih.gov/pubmed/23626845
http://dx.doi.org/10.1371/journal.pone.0062672
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author Liu, Quanlong
Zhao, Chunwang
Su, Shaojian
Li, Jijun
Xing, Yongming
Cheng, Buwen
author_facet Liu, Quanlong
Zhao, Chunwang
Su, Shaojian
Li, Jijun
Xing, Yongming
Cheng, Buwen
author_sort Liu, Quanlong
collection PubMed
description Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls–Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.
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spelling pubmed-36338712013-04-26 Strain Field Mapping of Dislocations in a Ge/Si Heterostructure Liu, Quanlong Zhao, Chunwang Su, Shaojian Li, Jijun Xing, Yongming Cheng, Buwen PLoS One Research Article Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls–Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate. Public Library of Science 2013-04-23 /pmc/articles/PMC3633871/ /pubmed/23626845 http://dx.doi.org/10.1371/journal.pone.0062672 Text en © 2013 Liu et al http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are properly credited.
spellingShingle Research Article
Liu, Quanlong
Zhao, Chunwang
Su, Shaojian
Li, Jijun
Xing, Yongming
Cheng, Buwen
Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
title Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
title_full Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
title_fullStr Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
title_full_unstemmed Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
title_short Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
title_sort strain field mapping of dislocations in a ge/si heterostructure
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3633871/
https://www.ncbi.nlm.nih.gov/pubmed/23626845
http://dx.doi.org/10.1371/journal.pone.0062672
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