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Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HR...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Public Library of Science
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3633871/ https://www.ncbi.nlm.nih.gov/pubmed/23626845 http://dx.doi.org/10.1371/journal.pone.0062672 |
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author | Liu, Quanlong Zhao, Chunwang Su, Shaojian Li, Jijun Xing, Yongming Cheng, Buwen |
author_facet | Liu, Quanlong Zhao, Chunwang Su, Shaojian Li, Jijun Xing, Yongming Cheng, Buwen |
author_sort | Liu, Quanlong |
collection | PubMed |
description | Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls–Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate. |
format | Online Article Text |
id | pubmed-3633871 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Public Library of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-36338712013-04-26 Strain Field Mapping of Dislocations in a Ge/Si Heterostructure Liu, Quanlong Zhao, Chunwang Su, Shaojian Li, Jijun Xing, Yongming Cheng, Buwen PLoS One Research Article Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls–Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate. Public Library of Science 2013-04-23 /pmc/articles/PMC3633871/ /pubmed/23626845 http://dx.doi.org/10.1371/journal.pone.0062672 Text en © 2013 Liu et al http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are properly credited. |
spellingShingle | Research Article Liu, Quanlong Zhao, Chunwang Su, Shaojian Li, Jijun Xing, Yongming Cheng, Buwen Strain Field Mapping of Dislocations in a Ge/Si Heterostructure |
title | Strain Field Mapping of Dislocations in a Ge/Si Heterostructure |
title_full | Strain Field Mapping of Dislocations in a Ge/Si Heterostructure |
title_fullStr | Strain Field Mapping of Dislocations in a Ge/Si Heterostructure |
title_full_unstemmed | Strain Field Mapping of Dislocations in a Ge/Si Heterostructure |
title_short | Strain Field Mapping of Dislocations in a Ge/Si Heterostructure |
title_sort | strain field mapping of dislocations in a ge/si heterostructure |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3633871/ https://www.ncbi.nlm.nih.gov/pubmed/23626845 http://dx.doi.org/10.1371/journal.pone.0062672 |
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