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Strain Field Mapping of Dislocations in a Ge/Si Heterostructure

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HR...

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Detalles Bibliográficos
Autores principales:	Liu, Quanlong, Zhao, Chunwang, Su, Shaojian, Li, Jijun, Xing, Yongming, Cheng, Buwen
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Public Library of Science 2013
Materias:	Research Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3633871/ https://www.ncbi.nlm.nih.gov/pubmed/23626845 http://dx.doi.org/10.1371/journal.pone.0062672

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