Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

Cerium oxide (CeO(2)) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150°C, 200°C, 250°C, 300°C, and 350°C, respectively. CeO(2) were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are go...

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Detalles Bibliográficos
Autores principales: Zhao, Chun, Zhao, Ce Zhou, Werner, Matthew, Taylor, Steve, Chalker, Paul, King, Peter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639797/
https://www.ncbi.nlm.nih.gov/pubmed/23587419
http://dx.doi.org/10.1186/1556-276X-8-172

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639797/
https://www.ncbi.nlm.nih.gov/pubmed/23587419
http://dx.doi.org/10.1186/1556-276X-8-172

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