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Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon

Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that cata...

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Detalles Bibliográficos
Autores principales: Zuo, Zewen, Cui, Guanglei, Shi, Yi, Liu, Yousong, Ji, Guangbin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639818/
https://www.ncbi.nlm.nih.gov/pubmed/23618313
http://dx.doi.org/10.1186/1556-276X-8-193