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Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon
Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that cata...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639818/ https://www.ncbi.nlm.nih.gov/pubmed/23618313 http://dx.doi.org/10.1186/1556-276X-8-193 |