The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation

We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si(3)N(4) layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs ‘explode,’ regressing back almost...

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Detalles Bibliográficos
Autores principales: Wang, Ching-Chi, Liao, Po-Hsiang, Kuo, Ming-Hao, George, Tom, Li, Pei-Wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639922/
https://www.ncbi.nlm.nih.gov/pubmed/23618165
http://dx.doi.org/10.1186/1556-276X-8-192

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639922/
https://www.ncbi.nlm.nih.gov/pubmed/23618165
http://dx.doi.org/10.1186/1556-276X-8-192

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