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The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation
We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si(3)N(4) layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs ‘explode,’ regressing back almost...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639922/ https://www.ncbi.nlm.nih.gov/pubmed/23618165 http://dx.doi.org/10.1186/1556-276X-8-192 |