Tunable band gap in few-layer graphene by surface adsorption

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel's conductance individually. Using first principle calculations, we pr...

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Detalles Bibliográficos
Autores principales: Quhe, Ruge, Ma, Jianhua, Zeng, Zesheng, Tang, Kechao, Zheng, Jiaxin, Wang, Yangyang, Ni, Zeyuan, Wang, Lu, Gao, Zhengxiang, Shi, Junjie, Lu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3646358/
http://dx.doi.org/10.1038/srep01794

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3646358/
http://dx.doi.org/10.1038/srep01794

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