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Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer
Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ∼600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer fr...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Molecular Diversity Preservation International (MDPI)
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649398/ https://www.ncbi.nlm.nih.gov/pubmed/23429510 http://dx.doi.org/10.3390/s130202475 |