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Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer
Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ∼600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer fr...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Molecular Diversity Preservation International (MDPI)
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649398/ https://www.ncbi.nlm.nih.gov/pubmed/23429510 http://dx.doi.org/10.3390/s130202475 |
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author | Currie, Marc Dianat, Pouya Persano, Anna Martucci, Maria Concetta Quaranta, Fabio Cola, Adriano Nabet, Bahram |
author_facet | Currie, Marc Dianat, Pouya Persano, Anna Martucci, Maria Concetta Quaranta, Fabio Cola, Adriano Nabet, Bahram |
author_sort | Currie, Marc |
collection | PubMed |
description | Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ∼600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster—∼6 ps for a cathode-anode separation of 1.3 μm and ∼12 ps for distances more than 3 μm. |
format | Online Article Text |
id | pubmed-3649398 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Molecular Diversity Preservation International (MDPI) |
record_format | MEDLINE/PubMed |
spelling | pubmed-36493982013-06-04 Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer Currie, Marc Dianat, Pouya Persano, Anna Martucci, Maria Concetta Quaranta, Fabio Cola, Adriano Nabet, Bahram Sensors (Basel) Article Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ∼600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster—∼6 ps for a cathode-anode separation of 1.3 μm and ∼12 ps for distances more than 3 μm. Molecular Diversity Preservation International (MDPI) 2013-02-18 /pmc/articles/PMC3649398/ /pubmed/23429510 http://dx.doi.org/10.3390/s130202475 Text en © 2013 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Article Currie, Marc Dianat, Pouya Persano, Anna Martucci, Maria Concetta Quaranta, Fabio Cola, Adriano Nabet, Bahram Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer |
title | Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer |
title_full | Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer |
title_fullStr | Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer |
title_full_unstemmed | Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer |
title_short | Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer |
title_sort | performance enhancement of a gaas detector with a vertical field and an embedded thin low-temperature grown layer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649398/ https://www.ncbi.nlm.nih.gov/pubmed/23429510 http://dx.doi.org/10.3390/s130202475 |
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