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A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operat...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Molecular Diversity Preservation International (MDPI)
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649430/ https://www.ncbi.nlm.nih.gov/pubmed/23385408 http://dx.doi.org/10.3390/s130201856 |