A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operat...

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Detalles Bibliográficos
Autores principales: Aiello, Orazio, Fiori, Franco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649430/
https://www.ncbi.nlm.nih.gov/pubmed/23385408
http://dx.doi.org/10.3390/s130201856
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author Aiello, Orazio
Fiori, Franco
author_facet Aiello, Orazio
Fiori, Franco
author_sort Aiello, Orazio
collection PubMed
description This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.
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spelling pubmed-36494302013-06-04 A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI Aiello, Orazio Fiori, Franco Sensors (Basel) Article This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor. Molecular Diversity Preservation International (MDPI) 2013-01-31 /pmc/articles/PMC3649430/ /pubmed/23385408 http://dx.doi.org/10.3390/s130201856 Text en © 2013 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Aiello, Orazio
Fiori, Franco
A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
title A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
title_full A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
title_fullStr A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
title_full_unstemmed A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
title_short A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
title_sort new mirroring circuit for power mos current sensing highly immune to emi
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649430/
https://www.ncbi.nlm.nih.gov/pubmed/23385408
http://dx.doi.org/10.3390/s130201856
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