GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this wor...

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Detalles Bibliográficos
Autores principales: Li, Jie, Guo, Hao, Liu, Jun, Tang, Jun, Ni, Haiqiao, Shi, Yunbo, Xue, Chenyang, Niu, Zhichuan, Zhang, Wendong, Li, Mifeng, Yu, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3653705/
https://www.ncbi.nlm.nih.gov/pubmed/23651496
http://dx.doi.org/10.1186/1556-276X-8-218

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3653705/
https://www.ncbi.nlm.nih.gov/pubmed/23651496
http://dx.doi.org/10.1186/1556-276X-8-218

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