GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this wor...

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Detalles Bibliográficos
Autores principales: Li, Jie, Guo, Hao, Liu, Jun, Tang, Jun, Ni, Haiqiao, Shi, Yunbo, Xue, Chenyang, Niu, Zhichuan, Zhang, Wendong, Li, Mifeng, Yu, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3653705/
https://www.ncbi.nlm.nih.gov/pubmed/23651496
http://dx.doi.org/10.1186/1556-276X-8-218
Descripción
Sumario:As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10(−9) m(2)/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

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