GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this wor...

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Autores principales: Li, Jie, Guo, Hao, Liu, Jun, Tang, Jun, Ni, Haiqiao, Shi, Yunbo, Xue, Chenyang, Niu, Zhichuan, Zhang, Wendong, Li, Mifeng, Yu, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3653705/
https://www.ncbi.nlm.nih.gov/pubmed/23651496
http://dx.doi.org/10.1186/1556-276X-8-218
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author Li, Jie
Guo, Hao
Liu, Jun
Tang, Jun
Ni, Haiqiao
Shi, Yunbo
Xue, Chenyang
Niu, Zhichuan
Zhang, Wendong
Li, Mifeng
Yu, Ying
author_facet Li, Jie
Guo, Hao
Liu, Jun
Tang, Jun
Ni, Haiqiao
Shi, Yunbo
Xue, Chenyang
Niu, Zhichuan
Zhang, Wendong
Li, Mifeng
Yu, Ying
author_sort Li, Jie
collection PubMed
description As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10(−9) m(2)/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.
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spelling pubmed-36537052013-05-15 GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications Li, Jie Guo, Hao Liu, Jun Tang, Jun Ni, Haiqiao Shi, Yunbo Xue, Chenyang Niu, Zhichuan Zhang, Wendong Li, Mifeng Yu, Ying Nanoscale Res Lett Nano Idea As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10(−9) m(2)/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors. Springer 2013-05-08 /pmc/articles/PMC3653705/ /pubmed/23651496 http://dx.doi.org/10.1186/1556-276X-8-218 Text en Copyright ©2013 Li et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Idea
Li, Jie
Guo, Hao
Liu, Jun
Tang, Jun
Ni, Haiqiao
Shi, Yunbo
Xue, Chenyang
Niu, Zhichuan
Zhang, Wendong
Li, Mifeng
Yu, Ying
GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
title GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
title_full GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
title_fullStr GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
title_full_unstemmed GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
title_short GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
title_sort gaas-based resonant tunneling diode (rtd) epitaxy on si for highly sensitive strain gauge applications
topic Nano Idea
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3653705/
https://www.ncbi.nlm.nih.gov/pubmed/23651496
http://dx.doi.org/10.1186/1556-276X-8-218
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