Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study

High-resolution synchrotron radiation photoemission was employed to study the effects of atomic-layer-deposited trimethylaluminum (TMA) and water on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces. No high charge states were found in either As 3d or Ga 3d core-level spectra before and a...

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Detalles Bibliográficos
Autores principales: Pi, Tun-Wen, Lin, Hsiao-Yu, Liu, Ya-Ting, Lin, Tsung-Da, Wertheim, Gunther K, Kwo, Jueinai, Hong, Minghwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3656810/
https://www.ncbi.nlm.nih.gov/pubmed/23587341
http://dx.doi.org/10.1186/1556-276X-8-169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3656810/
https://www.ncbi.nlm.nih.gov/pubmed/23587341
http://dx.doi.org/10.1186/1556-276X-8-169

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