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Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study
High-resolution synchrotron radiation photoemission was employed to study the effects of atomic-layer-deposited trimethylaluminum (TMA) and water on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces. No high charge states were found in either As 3d or Ga 3d core-level spectra before and a...
Autores principales: | Pi, Tun-Wen, Lin, Hsiao-Yu, Liu, Ya-Ting, Lin, Tsung-Da, Wertheim, Gunther K, Kwo, Jueinai, Hong, Minghwei |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3656810/ https://www.ncbi.nlm.nih.gov/pubmed/23587341 http://dx.doi.org/10.1186/1556-276X-8-169 |
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