Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates unde...

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Detalles Bibliográficos
Autores principales: Yakimov, Andrew, Kirienko, Victor, Armbrister, Vladislav, Dvurechenskii, Anatolii
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3664082/
https://www.ncbi.nlm.nih.gov/pubmed/23651470
http://dx.doi.org/10.1186/1556-276X-8-217

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3664082/
https://www.ncbi.nlm.nih.gov/pubmed/23651470
http://dx.doi.org/10.1186/1556-276X-8-217

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