Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates unde...

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Autores principales: Yakimov, Andrew, Kirienko, Victor, Armbrister, Vladislav, Dvurechenskii, Anatolii
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3664082/
https://www.ncbi.nlm.nih.gov/pubmed/23651470
http://dx.doi.org/10.1186/1556-276X-8-217
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author Yakimov, Andrew
Kirienko, Victor
Armbrister, Vladislav
Dvurechenskii, Anatolii
author_facet Yakimov, Andrew
Kirienko, Victor
Armbrister, Vladislav
Dvurechenskii, Anatolii
author_sort Yakimov, Andrew
collection PubMed
description We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage.
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spelling pubmed-36640822013-05-29 Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate Yakimov, Andrew Kirienko, Victor Armbrister, Vladislav Dvurechenskii, Anatolii Nanoscale Res Lett Nano Express We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage. Springer 2013-05-08 /pmc/articles/PMC3664082/ /pubmed/23651470 http://dx.doi.org/10.1186/1556-276X-8-217 Text en Copyright ©2013 Yakimov et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Yakimov, Andrew
Kirienko, Victor
Armbrister, Vladislav
Dvurechenskii, Anatolii
Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
title Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
title_full Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
title_fullStr Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
title_full_unstemmed Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
title_short Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
title_sort broadband ge/sige quantum dot photodetector on pseudosubstrate
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3664082/
https://www.ncbi.nlm.nih.gov/pubmed/23651470
http://dx.doi.org/10.1186/1556-276X-8-217
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AT armbristervladislav broadbandgesigequantumdotphotodetectoronpseudosubstrate
AT dvurechenskiianatolii broadbandgesigequantumdotphotodetectoronpseudosubstrate

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