Passivation mechanism of thermal atomic layer-deposited Al(2)O(3) films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al(2)O(3)) acquires high negative fixed charge density (Q(f)) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q(f) can be controlled by varying the annealing tempera...

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Detalles Bibliográficos
Autores principales: Zhao, Yan, Zhou, Chunlan, Zhang, Xiang, Zhang, Peng, Dou, Yanan, Wang, Wenjing, Cao, Xingzhong, Wang, Baoyi, Tang, Yehua, Zhou, Su
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3664088/
https://www.ncbi.nlm.nih.gov/pubmed/23452508
http://dx.doi.org/10.1186/1556-276X-8-114

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3664088/
https://www.ncbi.nlm.nih.gov/pubmed/23452508
http://dx.doi.org/10.1186/1556-276X-8-114

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