Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications

Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmis...

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Detalles Bibliográficos
Autores principales: Ding, Shi-Jin, Chen, Hong-Bing, Cui, Xing-Mei, Chen, Sun, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei, Shen, Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://www.ncbi.nlm.nih.gov/pubmed/23413837
http://dx.doi.org/10.1186/1556-276X-8-80

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://www.ncbi.nlm.nih.gov/pubmed/23413837
http://dx.doi.org/10.1186/1556-276X-8-80

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