Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications

Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmis...

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Detalles Bibliográficos
Autores principales: Ding, Shi-Jin, Chen, Hong-Bing, Cui, Xing-Mei, Chen, Sun, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei, Shen, Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://www.ncbi.nlm.nih.gov/pubmed/23413837
http://dx.doi.org/10.1186/1556-276X-8-80
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author Ding, Shi-Jin
Chen, Hong-Bing
Cui, Xing-Mei
Chen, Sun
Sun, Qing-Qing
Zhou, Peng
Lu, Hong-Liang
Zhang, David Wei
Shen, Chen
author_facet Ding, Shi-Jin
Chen, Hong-Bing
Cui, Xing-Mei
Chen, Sun
Sun, Qing-Qing
Zhou, Peng
Lu, Hong-Liang
Zhang, David Wei
Shen, Chen
author_sort Ding, Shi-Jin
collection PubMed
description Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 10(12) cm(-2) have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)(3), and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al(2)O(3) dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention.
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spelling pubmed-36668952013-05-30 Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications Ding, Shi-Jin Chen, Hong-Bing Cui, Xing-Mei Chen, Sun Sun, Qing-Qing Zhou, Peng Lu, Hong-Liang Zhang, David Wei Shen, Chen Nanoscale Res Lett Nano Express Pt nanodots have been grown on Al(2)O(3) film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O(2) precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 10(12) cm(-2) have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)(3), and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al(2)O(3) dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention. Springer 2013-02-15 /pmc/articles/PMC3666895/ /pubmed/23413837 http://dx.doi.org/10.1186/1556-276X-8-80 Text en Copyright ©2013 Ding et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Ding, Shi-Jin
Chen, Hong-Bing
Cui, Xing-Mei
Chen, Sun
Sun, Qing-Qing
Zhou, Peng
Lu, Hong-Liang
Zhang, David Wei
Shen, Chen
Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
title Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
title_full Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
title_fullStr Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
title_full_unstemmed Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
title_short Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
title_sort atomic layer deposition of high-density pt nanodots on al(2)o(3) film using (mecp)pt(me)(3) and o(2) precursors for nonvolatile memory applications
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3666895/
https://www.ncbi.nlm.nih.gov/pubmed/23413837
http://dx.doi.org/10.1186/1556-276X-8-80
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