Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance state changed from hopping conduction to Frenkel-Poole conduction with elevated...

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Detalles Bibliográficos
Autores principales: Zhou, Peng, Ye, Li, Sun, Qing Qing, Wang, Peng Fei, Jiang, An Quan, Ding, Shi Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3667048/
https://www.ncbi.nlm.nih.gov/pubmed/23421401
http://dx.doi.org/10.1186/1556-276X-8-91

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3667048/
https://www.ncbi.nlm.nih.gov/pubmed/23421401
http://dx.doi.org/10.1186/1556-276X-8-91

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