Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance state changed from hopping conduction to Frenkel-Poole conduction with elevated...

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Detalles Bibliográficos
Autores principales: Zhou, Peng, Ye, Li, Sun, Qing Qing, Wang, Peng Fei, Jiang, An Quan, Ding, Shi Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3667048/
https://www.ncbi.nlm.nih.gov/pubmed/23421401
http://dx.doi.org/10.1186/1556-276X-8-91
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author Zhou, Peng
Ye, Li
Sun, Qing Qing
Wang, Peng Fei
Jiang, An Quan
Ding, Shi Jin
Zhang, David Wei
author_facet Zhou, Peng
Ye, Li
Sun, Qing Qing
Wang, Peng Fei
Jiang, An Quan
Ding, Shi Jin
Zhang, David Wei
author_sort Zhou, Peng
collection PubMed
description The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance state changed from hopping conduction to Frenkel-Poole conduction with elevated temperature. It is found that the conductive filament rupture in RRAM RESET process can be attributed not only to the Joule heat generated by internal current flow through a filament but also to the charge trap/detrapping effect. The RESET current decreases upon heating. Meanwhile, the energy consumption also decreases exponentially. This phenomenon indicates the temperature-related charge trap/detrapping process which contributes to the RESET besides direct Joule heat.
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spelling pubmed-36670482013-05-30 Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition Zhou, Peng Ye, Li Sun, Qing Qing Wang, Peng Fei Jiang, An Quan Ding, Shi Jin Zhang, David Wei Nanoscale Res Lett Nano Express The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance state changed from hopping conduction to Frenkel-Poole conduction with elevated temperature. It is found that the conductive filament rupture in RRAM RESET process can be attributed not only to the Joule heat generated by internal current flow through a filament but also to the charge trap/detrapping effect. The RESET current decreases upon heating. Meanwhile, the energy consumption also decreases exponentially. This phenomenon indicates the temperature-related charge trap/detrapping process which contributes to the RESET besides direct Joule heat. Springer 2013-02-19 /pmc/articles/PMC3667048/ /pubmed/23421401 http://dx.doi.org/10.1186/1556-276X-8-91 Text en Copyright ©2013 Zhou et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zhou, Peng
Ye, Li
Sun, Qing Qing
Wang, Peng Fei
Jiang, An Quan
Ding, Shi Jin
Zhang, David Wei
Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
title Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
title_full Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
title_fullStr Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
title_full_unstemmed Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
title_short Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
title_sort effect of concurrent joule heat and charge trapping on reset for nbalo fabricated by atomic layer deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3667048/
https://www.ncbi.nlm.nih.gov/pubmed/23421401
http://dx.doi.org/10.1186/1556-276X-8-91
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