Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increa...

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Detalles Bibliográficos
Autores principales: Lai, Fang-I, Yang, Jui-Fu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3671165/
https://www.ncbi.nlm.nih.gov/pubmed/23683526
http://dx.doi.org/10.1186/1556-276X-8-244

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3671165/
https://www.ncbi.nlm.nih.gov/pubmed/23683526
http://dx.doi.org/10.1186/1556-276X-8-244

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