Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer

A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb(3)Te layer which causes the reduction in the reset voltage compared to a conventional phase ch...

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Detalles Bibliográficos
Autores principales: Song, Sannian, Song, Zhitang, Peng, Cheng, Gao, Lina, Gu, Yifeng, Zhang, Zhonghua, Lv, Yegang, Yao, Dongning, Wu, Liangcai, Liu, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3673895/
https://www.ncbi.nlm.nih.gov/pubmed/23414571
http://dx.doi.org/10.1186/1556-276X-8-77

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3673895/
https://www.ncbi.nlm.nih.gov/pubmed/23414571
http://dx.doi.org/10.1186/1556-276X-8-77

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