Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer

A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb(3)Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline titanium dioxide material. Among the various thicknesses of the TiO(2) buffer layer, 4 nm was the most appropriate thickness that maximized the improvement with negligible sacrifice of the other device performances, such as the reset/set resistance ratio, voltage window, and endurance.