Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is comp...

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Detalles Bibliográficos
Autores principales: Çetinkaya, S., Çetinkara, H. A., Bayansal, F., Kahraman, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2013
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3677632/
https://www.ncbi.nlm.nih.gov/pubmed/23766670
http://dx.doi.org/10.1155/2013/126982

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3677632/
https://www.ncbi.nlm.nih.gov/pubmed/23766670
http://dx.doi.org/10.1155/2013/126982

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