A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the s...

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Detalles Bibliográficos
Autores principales: Presnov, Denis E, Amitonov, Sergey V, Krutitskii, Pavel A, Kolybasova, Valentina V, Devyatov, Igor A, Krupenin, Vladimir A, Soloviev, Igor I
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2013
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3678403/
https://www.ncbi.nlm.nih.gov/pubmed/23766958
http://dx.doi.org/10.3762/bjnano.4.38

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3678403/
https://www.ncbi.nlm.nih.gov/pubmed/23766958
http://dx.doi.org/10.3762/bjnano.4.38

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