A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the s...

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Autores principales: Presnov, Denis E, Amitonov, Sergey V, Krutitskii, Pavel A, Kolybasova, Valentina V, Devyatov, Igor A, Krupenin, Vladimir A, Soloviev, Igor I
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2013
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3678403/
https://www.ncbi.nlm.nih.gov/pubmed/23766958
http://dx.doi.org/10.3762/bjnano.4.38
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author Presnov, Denis E
Amitonov, Sergey V
Krutitskii, Pavel A
Kolybasova, Valentina V
Devyatov, Igor A
Krupenin, Vladimir A
Soloviev, Igor I
author_facet Presnov, Denis E
Amitonov, Sergey V
Krutitskii, Pavel A
Kolybasova, Valentina V
Devyatov, Igor A
Krupenin, Vladimir A
Soloviev, Igor I
author_sort Presnov, Denis E
collection PubMed
description Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.
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spelling pubmed-36784032013-06-13 A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator Presnov, Denis E Amitonov, Sergey V Krutitskii, Pavel A Kolybasova, Valentina V Devyatov, Igor A Krupenin, Vladimir A Soloviev, Igor I Beilstein J Nanotechnol Full Research Paper Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip. Beilstein-Institut 2013-05-28 /pmc/articles/PMC3678403/ /pubmed/23766958 http://dx.doi.org/10.3762/bjnano.4.38 Text en Copyright © 2013, Presnov et al. https://creativecommons.org/licenses/by/2.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Presnov, Denis E
Amitonov, Sergey V
Krutitskii, Pavel A
Kolybasova, Valentina V
Devyatov, Igor A
Krupenin, Vladimir A
Soloviev, Igor I
A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
title A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
title_full A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
title_fullStr A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
title_full_unstemmed A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
title_short A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
title_sort highly ph-sensitive nanowire field-effect transistor based on silicon on insulator
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3678403/
https://www.ncbi.nlm.nih.gov/pubmed/23766958
http://dx.doi.org/10.3762/bjnano.4.38
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