Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires

A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have foc...

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Detalles Bibliográficos
Autores principales: Lee, Woo-Jung, Ma, Jin Won, Bae, Jung Min, Jeong, Kwang-Sik, Cho, Mann-Ho, Kang, Chul, Wi, Jung-Sub
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3680808/
https://www.ncbi.nlm.nih.gov/pubmed/23760467
http://dx.doi.org/10.1038/srep01984

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3680808/
https://www.ncbi.nlm.nih.gov/pubmed/23760467
http://dx.doi.org/10.1038/srep01984

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