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Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires
A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have foc...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3680808/ https://www.ncbi.nlm.nih.gov/pubmed/23760467 http://dx.doi.org/10.1038/srep01984 |