Cargando…

Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spe...

Descripción completa

Detalles Bibliográficos
Autores principales: Chan, Shih-Hao, Chen, Sheng-Hui, Lin, Wei-Ting, Li, Meng-Chi, Lin, Yung-Chang, Kuo, Chien-Cheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3682863/
https://www.ncbi.nlm.nih.gov/pubmed/23758668
http://dx.doi.org/10.1186/1556-276X-8-285
_version_ 1782273411604545536
author Chan, Shih-Hao
Chen, Sheng-Hui
Lin, Wei-Ting
Li, Meng-Chi
Lin, Yung-Chang
Kuo, Chien-Cheng
author_facet Chan, Shih-Hao
Chen, Sheng-Hui
Lin, Wei-Ting
Li, Meng-Chi
Lin, Yung-Chang
Kuo, Chien-Cheng
author_sort Chan, Shih-Hao
collection PubMed
description Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.
format Online
Article
Text
id pubmed-3682863
institution National Center for Biotechnology Information
language English
publishDate 2013
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-36828632013-06-24 Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition Chan, Shih-Hao Chen, Sheng-Hui Lin, Wei-Ting Li, Meng-Chi Lin, Yung-Chang Kuo, Chien-Cheng Nanoscale Res Lett Nano Express Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications. Springer 2013-06-12 /pmc/articles/PMC3682863/ /pubmed/23758668 http://dx.doi.org/10.1186/1556-276X-8-285 Text en Copyright ©2013 Chan et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Chan, Shih-Hao
Chen, Sheng-Hui
Lin, Wei-Ting
Li, Meng-Chi
Lin, Yung-Chang
Kuo, Chien-Cheng
Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
title Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
title_full Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
title_fullStr Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
title_full_unstemmed Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
title_short Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
title_sort low-temperature synthesis of graphene on cu using plasma-assisted thermal chemical vapor deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3682863/
https://www.ncbi.nlm.nih.gov/pubmed/23758668
http://dx.doi.org/10.1186/1556-276X-8-285
work_keys_str_mv AT chanshihhao lowtemperaturesynthesisofgrapheneoncuusingplasmaassistedthermalchemicalvapordeposition
AT chenshenghui lowtemperaturesynthesisofgrapheneoncuusingplasmaassistedthermalchemicalvapordeposition
AT linweiting lowtemperaturesynthesisofgrapheneoncuusingplasmaassistedthermalchemicalvapordeposition
AT limengchi lowtemperaturesynthesisofgrapheneoncuusingplasmaassistedthermalchemicalvapordeposition
AT linyungchang lowtemperaturesynthesisofgrapheneoncuusingplasmaassistedthermalchemicalvapordeposition
AT kuochiencheng lowtemperaturesynthesisofgrapheneoncuusingplasmaassistedthermalchemicalvapordeposition