Metallic behaviour in SOI quantum wells with strong intervalley scattering

The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for valleytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had...

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Detalles Bibliográficos
Autores principales: Renard, V. T., Duchemin, I., Niida, Y., Fujiwara, A., Hirayama, Y., Takashina, K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3684805/
https://www.ncbi.nlm.nih.gov/pubmed/23774638
http://dx.doi.org/10.1038/srep02011

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3684805/
https://www.ncbi.nlm.nih.gov/pubmed/23774638
http://dx.doi.org/10.1038/srep02011

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