Resistive switching memory characteristics of Ge/GeO(x) nanowires and evidence of oxygen ion migration

The resistive switching memory of Ge nanowires (NWs) in an IrO(x)/Al(2)O(3)/Ge NWs/SiO(2)/p-Si structure is investigated. Ge NWs with an average diameter of approximately 100 nm are grown by the vapor–liquid-solid technique. The core-shell structure of the Ge/GeO(x) NWs is confirmed by both scanning...

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Detalles Bibliográficos
Autores principales: Prakash, Amit, Maikap, Siddheswar, Rahaman, Sheikh Ziaur, Majumdar, Sandip, Manna, Santanu, Ray, Samit K
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3686581/
https://www.ncbi.nlm.nih.gov/pubmed/23657016
http://dx.doi.org/10.1186/1556-276X-8-220

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3686581/
https://www.ncbi.nlm.nih.gov/pubmed/23657016
http://dx.doi.org/10.1186/1556-276X-8-220

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