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Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering

ABSTRACT: In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 10(17) ions cm(-2)) which undergo a tran...

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Detalles Bibliográficos
Autores principales: Basu, Tanmoy, Datta, Debi Prasad, Som, Tapobrata
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3691652/
https://www.ncbi.nlm.nih.gov/pubmed/23782769
http://dx.doi.org/10.1186/1556-276X-8-289